Kingston SODIMM DDR3L 2Gb 1333MHz CL9
(0)| FACTOR DE FORMA | SODIMM 204 espigas | |
| CAPACIDAD | 2Gb | |
| TIPO DE RAM | DDR3 | |
| VELOCIDAD | 1333 Mhz | |
| Nº MODULOS | 1 | |
| LATENCIA RAM | CL9 | |
| TENSION | 1.35 v | |
| COMPATIBLE MAC |
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| ECC |
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Te presentamos la memoria para portatil SODIMM modelo ValueRAM de Kingston DDR3L (bajo voltaje 1.35v).
Cuenta con 2Gb de memoria a 1333MHz. Una cara, un rank.
KVR13LS9S6/2
2GB 1Rx16 256M x 64-Bit PC3L-10600 CL9 204-Pin SODIMM
Descripción:
This document describes ValueRAM's 256M x 64-bit (2GB) DDR3L-1333 CL9 SDRAM (Synchronous DRAM) 1Rx16, memory module, based on four 256M x 16-bit FBGA compo- nents. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.35V or 1.5V. This 204-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
Caracteristicas:
• JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply
• VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 9, 8, 7, 6, 5
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), single sided component
Especificaciones:
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.125ns (min.)
Refresh to Active/Refresh 260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 36ns (min.)
Maximum Operating Power (1.35V) 0.945 W*
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C
*Power will vary depending on the SDRAM used.
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